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Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-02170
Features
* Cascadable 50 Gain Block * Low Noise Figure: 2.0 dB Typical at 0.5 GHz * High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz * 3 dB Bandwidth: DC to 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Gold-Ceramic Surface Mount Package
feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification. The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
70 mil Package
Description
The INA-02170 is a low noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC)
Typical Biasing Configuration
VCC > 8 GHz RFC (Optional) Rbias Cblock RF IN 1 2 4 3 Vd = 5.5 V Cblock RF OUT
6-93
5965-9674E
INA-02170 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 400 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 140C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 144C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
INA-02170 Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 35 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.01 to 1.0 GHz f = 0.01 to 1.0 GHz f = 0.01 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.01 to 1.0 GHz
Units
dB dB GHz dB
Min.
29.0
Typ.
31.5 1.5 1.0 39 1.4:1 1.5:1
Max.
34.0
dB dBm dBm psec V mV/C 4.0
2.0 11 23 350 5.5 +10
2.5
7.0
Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP).
INA-02170 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00
.05 .05 .06 .09 .12 .15 .17 .17 .18 .19 .19 .20 .21 .22 .23 .25 .29
-8 -31 -85 -110 -129 -140 -151 -159 -174 179 173 166 162 159 155 150 144
32.5 32.5 32.5 32.3 32.0 31.7 31.4 31.0 30.2 29.2 27.8 26.1 24.2 22.3 20.4 16.7 13.1
42.32 42.32 42.05 41.06 39.82 38.43 37.08 35.49 32.45 28.70 24.51 20.18 16.26 13.02 10.45 6.82 4.51
-2 -7 -14 -27 -40 -53 -65 -77 -101 -126 -149 -171 170 153 139 112 87 6-94
-39.2 -38.9 -38.0 -38.8 -38.8 -40.2 -40.0 -39.6 -38.2 -38.2 -37.5 -36.2 -36.3 -34.1 -33.0 -33.3 -31.8
.011 .011 .013 .011 .011 .010 .010 .011 .012 .012 .013 .015 .015 .020 .022 .022 .026
14 14 10 5 1 19 8 23 23 17 27 35 34 46 37 32 32
.19 .19 .19 .18 .17 .16 .16 .16 .16 .16 .15 .14 .12 .10 .07 .05 .04
-1 -5 -10 -16 -21 -25 -27 -30 -40 -53 -71 -102 -172 144 117 95 78
1.26 1.26 1.15 1.29 1.32 1.45 1.48 1.43 1.43 1.55 1.66 1.73 2.07 1.94 2.17 3.19 3.96
INA-02170 Typical Performance, TA = 25C
(unless otherwise noted)
35 Gain Flat to DC 40 30 3.0 Id (mA) 30 3.5 50 TMS = +125C TMS = +25C TMS = -55C Gp (dB) 30 35 0.1 GHz 0.5 GHz 1.0 GHz 1.5 GHz
NF (dB)
Gp (dB)
25
2.5
25
20
20
2.0 10
20
15 .01 .02 .05 0.1 0.2 0.5 1.0 FREQUENCY (GHz)
1.5 2.0
0 0 2 4 Vd (V) 6 8
15 20
30 Id (mA)
40
50
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
32 Gp (dB) 31 30 P1 dB P1 dB (dBm) P1 dB (dBm) 29 14 12 3.0 NF (dB) 2.5 2.0 1.0 1.0 -55 -25 +25 +85 +125 NF 10 8 Gp
15 Id = 40 mA 12
3.5
3.0 Id = 35 mA NF (dB) 9 Id = 30 mA 6 2.0 3 Id = 30 to 40 mA 2.5
0 .02
.05
0.1
0.2
0.5
1.0
2.0
1.5 .02
.05
0.1
0.2
0.5
1.0
2.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.1 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
.004 .002 .10 .05
.070 1.70
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.495 .030 12.57 .76
.035 .89
6-95

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